vishay il350 / 351 / 358 / 359 document number 83623 rev. 1.2, 26-oct-04 vishay semiconductors www.vishay.com 1 i179028 1 2 3 4 5 6 7 8 k a n.c n.c k a k a pb p b -free e3 linear optocoupler for optical daa in telecommunications, high performance features ? 2.0 mm high smt package high sensitivity (k1) at low operating led cur- rent couples ac and dc signals low input-output capacitance isolation voltage, 3000 v rms low distortion lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications optical daa for v.34 f ax/modem pcmcia cards digital telephone line isolation description the il350/351/358/359 family of linear optocoupler consist of an irled optically coupled to two photo- diodes. the emitter mechanically faces both diodes enabling them to receive approximately an equal amount of infrared light. the diodes produce a pro- portional amount of photocurrents. the ratio of the photocurrents stays constant with high accuracy when either the led current changes or the ambient temperature changes. thus one can control the out- put diode current optically by controlling the input photodiode current. the il350/351/358/359 optocouplers can be used with the aid of operational amplifiers in closed loop conditions to achieve highly linear and electrically iso- lated ac and or dc signal amplifiers. order information for additional information on t he available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. exposure to absolute maximum rating for extended periods of t he time can adversely affect reliability. input part remarks il350 couples ac snd dc signals il351 couples ac snd dc signals il358 couples ac snd dc signals IL359 couples ac snd dc signals parameter test condition symbol value unit reverse voltage v r 3.0 v forward current i f 30 ma surge current pulse width < 10 si fsm 150 ma power dissipation t amb = 25 c p diss 150 mw derate linearly from 25 c 2.0 mw/c
www.vishay.com 2 document number 83623 rev. 1.2, 26-oct-04 vishay il350 / 351 / 358 / 359 vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input led emitter output coupler parameter test condition symbol value unit reverse voltage v r 15 v power disipation p diss 50 mw derate linearly from 25 c 0.65 mw/c junction temperature t j 100 c parameter test condition symbol value unit isolation test voltage t = 1.0 sec. v iso 3000 v rms total package power dissipation p tot 250 mw derate linearly from 25c 2.8 mw/c storage temperature range t stg - 40 to + 150 c operating temperature t amb 75 c lead soldering time at 260c 10 sec. isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1.8 2.1 v reverse current v r = 3.0 v i r .01 10 a v f temperature coefficient ? v f / ? c - 2.2 mv/c junction capacitance v f = 0 v, f = 1.0 mhz c j 15 pf dynamic resistance i f = 2.5 ma, ? i f = 1.0 ma ? v f / ? i f 6.0 ? switching time il358/359 i f = 2.5 ma, ? i f = 1.0 ma t f 40 ns t r 40 ns parameter test condition symbol min ty p. max unit junction capacitance v f = 0 v, f = 1.0 mhz c j 12 pf nep v det = 0 v < 4 -14 w/ hz parameter test condition part symbol min ty p. max unit capacitance (input-output) v f = 0 v, f = 1.0 mhz c io 1.0 pf common mode capacitance v f = 0 v, f = 1.0 mhz c cm 0.5 pf
vishay il350 / 351 / 358 / 359 document number 83623 rev. 1.2, 26-oct-04 vishay semiconductors www.vishay.com 3 switching characteristics ac characteristi cs photovoltaic mode bin table coupled characteristics package dimensions in inches (mm) parameter test condition part symbol min ty p. max unit frequency response i p1 = 25 a, modulation current ? ip = 6.0 a il358 bw (-3 db) 1.0 mhz IL359 bw (-3 db) 1.0 mhz phase response i p1 = 25 a, modulation current ? ip = 6.0 a 45 deg. rise time i p1 = 25 a, modulation current ? ip = 6.0 a 350 ns bin min. max. a 0.557 0.626 b 0.620 0.696 c 0.690 0.773 d 0.765 0.859 e 0.851 0.955 f 0.945 1.061 g 1.051 1.181 h 1.169 1.311 i 1.297 1.456 j 1.442 1.618 partnumber k1 at i f = 2 ma, v o = 0 v k3 bins min. il350 0.003 a-j il351 0.005 d, e, f, g il358 0.008 c, d, e, f, g, h IL359 0.008 d, e, f, g i178013 .336 (8.4) .010 (.25) .225 (5.7) .215 (5.5) .230 (5.8) .220 (5.6) .091 (2.3) .083 (2.1) .016 (.41) typ. .050 (1.25) typ. .043 (1.09) .033 (.83) .291 (7.28) 010 (.250) 40 3C7 10 typ. .006 (.15) typ. pin one id .042 (1.05) ref. .015 (.38) .002 (.05) .047 (1.19) .002 (.05) iso method a r .010(.25) .050 (1.27) .036 (.91) .014 (.36) .266 (6.76) .045 (1.14) .356 (9.04)
www.vishay.com 4 document number 83623 rev. 1.2, 26-oct-04 vishay il350 / 351 / 358 / 359 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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